Two-wire serial interface, 128k EEPROM (16-kword x 8-bit), 256k EEPROM (32-kword x 8-bit)

Description HN58X24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. The

文件：69.86 Kbytes 页数：22 Pages

HitachiHitachi Semiconductor

日立日立公司

Two-wire serial interface 128k EEPROM (16-kword 쨈 8-bit) 256k EEPROM (32-kword 쨈 8-bit)

文件：79.51 Kbytes 页数：22 Pages

RENESAS

瑞萨

Two-wire serial interface 128k EEPROM (16-kword 쨈 8-bit) 256k EEPROM (32-kword 쨈 8-bit)

文件：111.79 Kbytes 页数：24 Pages

RENESAS

瑞萨

Two-wire serial interface 128k EEPROM (16-kword 횞 8-bit) 256k EEPROM (32-kword 횞 8-bit)

文件：150.87 Kbytes 页数：22 Pages

RENESAS

瑞萨

Two-wire serial interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit)

Description\nHN58X24xxx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They al • Single supply: 1.8 V to 5.5 V\n• Two-wire serial interface (I2CTM serial bus*1)\n• Clock frequency: 400 kHz\n• Power dissipation:\n- Standby: 3 µA (max)\n- Active (Read): 1 mA (max)\n- Active (Write): 5 mA (max)\n• Automatic page write: 64-byte/page\n• Write cycle time: 10 ms (2.7 V to 5.5 V)/1;

HITACHI

日立

Memory

Renesas

瑞萨