| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HMS18N10Q | 丝印:HMS18N10Q;Package:DFN3X3-8L;N-Channel Enhancement Mode Power MOSFET 文件:1.00807 Mbytes 页数:6 Pages | HMSEMI 华之美半导体 | HMSEMI | |
HMS18N10Q | 中压大电流SGT MOS | HmpowerSemi 虹美功率 | HmpowerSemi | |
N-Channel Enhancement Mode Field Effect Transistor 文件:613.16 Kbytes 页数:5 Pages | MCC | MCC | ||
NCE N-Channel Super Trench II Power MOSFET Description The NCEP18N10AQ uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for h 文件:326.76 Kbytes 页数:7 Pages | NCEPOWER 新洁能 | NCEPOWER | ||
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件:38.36 Kbytes 页数:5 Pages | INTERSIL | INTERSIL |
技术参数
- 封装(Package):
DFN3X3-8L
- 沟道(Polarity):
N沟道
- VDS(Max)BVDSS(V):
100.00V
- ID(Max)ID(A):
18.00A
- IDM:
72.00A
- VTH(Typ):
1.80V
- VGS:
20.00V
- RDS(ON)@-10VTyp(mΩ):
20.00mΩ
- RDS(ON)@-4.5VTyp(mΩ):
30.00mΩ
- RDS(ON)@-2.5VTyp(mΩ):
0.00mΩ
- 直接替代型号(compatible):
AON6484/AON6486AON7292/AON7296/AON7450
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
DFN3X3-8L |
986966 |
国产 |
询价 | ||
MEANWELL |
1000 |
询价 | |||||
LEM |
25+ |
传感器 |
796 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
LEM |
23+ |
550 |
全新原装正品现货,支持订货 |
询价 | |||
LEM |
2018+ |
550 |
询价 | ||||
LEM |
2022+ |
550 |
原厂原装,假一罚十 |
询价 | |||
LEM |
23+ |
SENSOR |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
LEM/莱姆 |
22+ |
SENSOR |
14100 |
原装正品 |
询价 | ||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
LEM/莱姆 |
19+ |
SENSOR |
1000 |
只做原装正品 |
询价 |
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