1 W功率放大器SMT，3.3 - 3.8 GHz

HMC409LP4(E)是一款高效率GaAs InGaP HBT MMIC功率放大器，工作频率范围为3.3至3.8 GHz。 该放大器采用低成本、无铅SMT封装。 它采用最少的外部元件，提供31 dB增益，饱和功率为+32.5 dBm，电源电压为+5V。 功率控制(Vpd)可用于全省电模式或RF输出功率/电流控制。 对于+22 dBm OFDM输出功率(64 QAM, 54 Mbps)，HMC409LP4(E)可实现2%的误差矢量幅度(EVM)，从而满足WiMAX 802.16线性度要求。 • 增益： 31 dB\n\n• 40% PAE (+32.5 dBm pout) \n\n• 2% EVM (Pout = +22 dBm)\n具有54 Mbps OFDM信号 \n\n• +46 dBm输出IP3 \n\n• 集成功率控制(Vpd) \n\n• +5V单电源;

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GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz

General Description The HMC409LP4 & HMC409LP4E are high effi ciency GaAs InGaP HBT MMIC Power amplifi ers operating from 3.3 to 3.8 GHz. The amplifi er is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifi er provides 31 dB of gain and +32.5 d

文件：415.61 Kbytes 页数：8 Pages

HITTITE

GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz

General Description The HMC409LP4 & HMC409LP4E are high effi ciency GaAs InGaP HBT MMIC Power amplifi ers operating from 3.3 to 3.8 GHz. The amplifi er is packaged in a low cost, leadless SMT package. Utilizing a minimum of external components the amplifi er provides 31 dB of gain and +32.5 d

文件：415.61 Kbytes 页数：8 Pages

HITTITE

GaAs InGaP HBT 1 WATT POWER AMPLIFIER,

General Description The HmC409lp4e are high efficiency GaAs inGap HBT mmiC power amplifiers operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless smT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated powe

文件：1.31865 Mbytes 页数：8 Pages

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GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz

文件：1.01905 Mbytes 页数：8 Pages

HITTITE

GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz

文件：1.01905 Mbytes 页数：8 Pages

HITTITE

GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz

文件：1.01905 Mbytes 页数：8 Pages

HITTITE

Package：24-VFQFN 裸露焊盘；包装：带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP WIMAX 3.3GHZ-3.8GHZ 24SMT

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Package：24-VFQFN 裸露焊盘；包装：卷带（TR） 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP WIMAX 3.3GHZ-3.8GHZ 24SMT

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