HMC409LP4ERF/IF射频/中频RFID的射频放大器规格书PDF中文资料

HMC409LP4E属于RF/IF射频/中频RFID的射频放大器。由亚德诺半导体技术有限公司制造生产的HMC409LP4E射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。

General Description

The HmC409lp4e are high efficiency GaAs inGap HBT mmiC power amplifiers operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless smT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5V supply voltage. The power control (Vpd) can be used for full power down or rf output power/current control. for +22 dBm ofDm output power (64 QAm, 54 mbps), the HmC409lp4e achieve an error vector magnitude (eVm) of 2, meeting wimAX 802.16 linearity requirements.

特性 Features

Gain: 31 dB

40 pAe @ +32.5 dBm pout

2 eVm @ pout = +22 dBm

with 54mbps ofDm signal

+46 dBm output ip3

integrated power Control (Vpd)

single +5V supply

Typical Applications

This amplifier is ideal for use as a power

amplifier for 3.3 - 3.8 GHz applications:

• wimAX 802.16

• fixed wireless Access

• wireless local loop