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HM628511HJP-10

4M High Speed SRAM (512-kword x 8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi, Ltd.

日立公司

HM628511HJP-12

4M High Speed SRAM (512-kword x 8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi, Ltd.

日立公司

HM628511HJP-15

4M High Speed SRAM (512-kword x 8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi, Ltd.

日立公司

HM628511HJPI-12

4M High Speed SRAM (512-kword x 8-bit)

Description TheHM628511HISeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwh

HitachiHitachi, Ltd.

日立公司

HM628511HJPI-15

4M High Speed SRAM (512-kword x 8-bit)

Description TheHM628511HISeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwh

HitachiHitachi, Ltd.

日立公司

HM628511H

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhi

HitachiHitachi, Ltd.

日立公司

HM628511HC

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HCSeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(6-transistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwhichrequireshigh

HitachiHitachi, Ltd.

日立公司

HM628511HCI

WideTemperatureRangeVersion4MHighSpeedSRAM(512-kword횞8-bit)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HM628511HI

4MHighSpeedSRAM(512-kwordx8-bit)

Description TheHM628511HISeriesisa4-MbithighspeedstaticRAMorganized512-kword×8-bit.IthasrealizedhighspeedaccesstimebyemployingCMOSprocess(4-transistor+2-polyresistormemorycell)andhighspeedcircuitdesigningtechnology.Itismostappropriatefortheapplicationwh

HitachiHitachi, Ltd.

日立公司

TPS628511

TPS62851x2.7-Vto6-V,0.5-A,1-A,2-A,and3-AStep-DownConvertersinaSOT583Package

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Inputvoltagerange:2.7Vto6V •Outputvoltagefrom0.6Vto5.5V •1feedbackvoltageaccuracy(fulltemperature range) •TJ=–40°Cto+150°C •Familyof0.5-A,1-A,2-A(conti

TITexas Instruments

德州仪器美国德州仪器公司

TPS628511

TPS62851x2.7-Vto6-V,0.5-A/1-A/2-AStep-DownConverterinSOT583Package

TITexas Instruments

德州仪器美国德州仪器公司

TPS628511DRLR

TPS62851x2.7-Vto6-V,0.5-A/1-A/2-AStep-DownConverterinSOT583Package

TITexas Instruments

德州仪器美国德州仪器公司

TPS628511DRLR

TPS62851x2.7-Vto6-V,0.5-A,1-A,2-A,and3-AStep-DownConvertersinaSOT583Package

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Inputvoltagerange:2.7Vto6V •Outputvoltagefrom0.6Vto5.5V •1feedbackvoltageaccuracy(fulltemperature range) •TJ=–40°Cto+150°C •Familyof0.5-A,1-A,2-A(conti

TITexas Instruments

德州仪器美国德州仪器公司

XPS628511DRLR

TPS62851x2.7-Vto6-V,0.5-A,1-A,2-A,and3-AStep-DownConvertersinaSOT583Package

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Inputvoltagerange:2.7Vto6V •Outputvoltagefrom0.6Vto5.5V •1feedbackvoltageaccuracy(fulltemperature range) •TJ=–40°Cto+150°C •Familyof0.5-A,1-A,2-A(conti

TITexas Instruments

德州仪器美国德州仪器公司

XPS628511DRLR

TPS62851x2.7-Vto6-V,0.5-A/1-A/2-AStep-DownConverterinSOT583Package

TITexas Instruments

德州仪器美国德州仪器公司

详细参数

  • 型号:

    HM628511HJP

  • 制造商:

    HITACHI

  • 制造商全称:

    Hitachi Semiconductor

  • 功能描述:

    4M High Speed SRAM(512-kword x 8-bit)

供应商型号品牌批号封装库存备注价格
HIT
22+
SOJ
2250
100%全新原装公司现货供应!随时可发货
询价
HIT
05+
原厂原装
6190
只做全新原装真实现货供应
询价
HIT
23+
SOJ
1007
优势库存
询价
06/07+
SOJ
7003
询价
HIT
0126+
SOJ-36
15
原装现货海量库存欢迎咨询
询价
HITACHI/日立
0709+
plcc
14916
只做原厂原装,认准宝芯创配单专家
询价
HITACHI/日立
1902+
plcc
2734
代理品牌
询价
HIT
22+
SOJ-36
360000
进口原装自己库存实库实数
询价
HITACHI/日立
22+
SOJ-36
9600
原装现货,优势供应,支持实单!
询价
HIT
2022
SOJ
2000
全新原装现货
询价
更多HM628511HJP供应商 更新时间2024-6-7 16:29:00