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HM628512CI

Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypo

HitachiHitachi, Ltd.

日立公司

HM628512CI

Wide Temperature Range Version 4 M SRAM (512-kword 쨈 8-bit)

Description TheHitachiHM628512CIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512CISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocsstechnology(6-transistormemorycell).TheHM628512CISeriesofferslowpowerstandbypower

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

628512LP

524288-wordx8-bitHighSpeedCMOSStaticRAM

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HM628512

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

HM628512

524288-wordx8-bitHighSpeedCMOSStaticRAM

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HM628512A

4MSRAM(512KWORDX8BIT)

Description TheHitachiHM628512Aisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

HM628512AI

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

HM628512ALFPI

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

HM628512ALPI

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

HM628512ALRRI

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

HM628512ALTTI

524288-wordx8-bitHighSpeedCMOSStaticRAM

Description TheHitachiHM628512AIisa4-MbitstaticRAMorganized512-kwordx8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyconploying0.5μmHi-CMOSprocesstechnology.

HitachiHitachi, Ltd.

日立公司

HM628512B

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Bisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemploying0.35µmHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIo

HitachiHitachi, Ltd.

日立公司

HM628512BFP

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BFPisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Itispackagedinstandard32-pinSOP. Features •Single5Vsupply •Accesstime:55/70ns

HitachiHitachi, Ltd.

日立公司

HM628512BI

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512BIisa4-MbitstaticRAMorganized512-kword×8-bit.HM628512BISerieshasrealizedhigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.TheHM628512BISeriesofferslowpowerstandbypowerdissipation;therefore,

HitachiHitachi, Ltd.

日立公司

HM628512C

4MSRAM(512-kword쨈8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingCMOSprocesstechnology(6-transistormemorycell).Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-mi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HM628512C

4MSRAM(512-kwordx8-bit)

Description TheHitachiHM628512Cisa4-MbitstaticRAMorganized512-kword×8-bit.Itrealizeshigherdensity,higherperformanceandlowpowerconsumptionbyemployingHi-CMOSprocesstechnology.Thedevice,packagedina525-milSOP(footprintpitchwidth)or400-milTSOPTYPEIIor600-mil

HitachiHitachi, Ltd.

日立公司

TPS628512

TPS62851x2.7-Vto6-V,0.5-A/1-A/2-AStep-DownConverterinSOT583Package

TITexas Instruments

德州仪器美国德州仪器公司

TPS628512

TPS62851x2.7-Vto6-V,0.5-A,1-A,2-A,and3-AStep-DownConvertersinaSOT583Package

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Inputvoltagerange:2.7Vto6V •Outputvoltagefrom0.6Vto5.5V •1feedbackvoltageaccuracy(fulltemperature range) •TJ=–40°Cto+150°C •Familyof0.5-A,1-A,2-A(conti

TITexas Instruments

德州仪器美国德州仪器公司

TPS628512DRLR

TPS62851x2.7-Vto6-V,0.5-A/1-A/2-AStep-DownConverterinSOT583Package

TITexas Instruments

德州仪器美国德州仪器公司

TPS628512DRLR

TPS62851x2.7-Vto6-V,0.5-A,1-A,2-A,and3-AStep-DownConvertersinaSOT583Package

1Features •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Inputvoltagerange:2.7Vto6V •Outputvoltagefrom0.6Vto5.5V •1feedbackvoltageaccuracy(fulltemperature range) •TJ=–40°Cto+150°C •Familyof0.5-A,1-A,2-A(conti

TITexas Instruments

德州仪器美国德州仪器公司

详细参数

  • 型号:

    HM628512CI

  • 制造商:

    HITACHI

  • 制造商全称:

    Hitachi Semiconductor

  • 功能描述:

    Wide Temperature Range Version 4 M SRAM(512-kword x 8-bit)

供应商型号品牌批号封装库存备注价格
SOP
99
询价
HIT
2017+
SOP-32
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
HIT
23+
SOP32
50
询价
HIT
23+
SOP-32
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
23+
N/A
85400
正品授权货源可靠
询价
HITACH
2020+
原厂封装
5187
专营军工航天芯片,只做全新原装,价格超低!
询价
HIT
SOP-32
68900
原包原标签100%进口原装常备现货!
询价
HIT
2023+环保现货
标准封装
2500
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
HITACHI/日立
22+
SOP32
3644
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
HIT
01+
SOP32
393
全新原装进口自己库存优势
询价
更多HM628512CI供应商 更新时间2024-4-30 10:50:00