4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：85.93 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

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4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged in standard 32-pin SOP. Features • Single 5 V supply • Access time: 55/70 ns

文件：58.06 Kbytes 页数：13 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged in standard 32-pin SOP. Features • Single 5 V supply • Access time: 55/70 ns

文件：58.06 Kbytes 页数：13 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged in standard 32-pin SOP. Features • Single 5 V supply • Access time: 55/70 ns

文件：58.06 Kbytes 页数：13 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore,

文件：84.98 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：85.93 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：85.93 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：85.93 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：85.93 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司

4 M SRAM (512-kword x 8-bit)

Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II o

文件：85.93 Kbytes 页数：18 Pages

HitachiHitachi Semiconductor

日立日立公司