4M High Speed SRAM (512-kword x 8-bit)

Description The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application wh

文件：64.22 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

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4M High Speed SRAM (512-kword x 8-bit)

HITACHI

日立

TPS62851x 2.7-V to 6-V, 0.5-A / 1-A / 2-A Step-Down Converter in SOT583 Package

文件：3.04213 Mbytes 页数：36 Pages

TI

德州仪器

TPS62851x 2.7-V to 6-V, 0.5-A, 1-A, 2-A, and 3-A Step-Down Converters in a SOT583 Package

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 2.7 V to 6 V • Output voltage from 0.6 V to 5.5 V • 1 feedback voltage accuracy (full temperature range) • TJ = –40°C to +150°C • Family of 0.5-A, 1-A, 2-A (conti

文件：2.94935 Mbytes 页数：39 Pages

TI

德州仪器

TPS62851x 2.7-V to 6-V, 0.5-A, 1-A, 2-A, and 3-A Step-Down Converters in a SOT583 Package

1 Features • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 2.7 V to 6 V • Output voltage from 0.6 V to 5.5 V • 1 feedback voltage accuracy (full temperature range) • TJ = –40°C to +150°C • Family of 0.5-A, 1-A, 2-A (conti

文件：2.94935 Mbytes 页数：39 Pages

TI

德州仪器