Low power consumption, Low ESR Cap. Compatible

文件：366.44 Kbytes 页数：8 Pages

HMSEMI

华之美半导体

4M high Speed SRAM (256-kword x 16-bit)

Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the applicatio

文件：102.82 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

4M High Speed SRAM (256-kword x 16-bit)

Description The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires hi

文件：95.06 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

4M High Speed SRAM (256-kword x 16-bit)

Description The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires hi

文件：95.06 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

4M High Speed SRAM (256-kword x 16-bit)

Description The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires hi

文件：95.06 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

4M High Speed SRAM (256-kword x 16-bit)

Description The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires hi

文件：95.06 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

4M High Speed SRAM (256-kword x 16-bit)

Description The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires hi

文件：95.06 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

4M high Speed SRAM (256-kword x 16-bit)

Description The HM6216255HI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application

文件：90.09 Kbytes 页数：16 Pages

HitachiHitachi Semiconductor

日立日立公司

4M high Speed SRAM (256-kword x 16-bit)

Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the applicatio

文件：102.82 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司

4M high Speed SRAM (256-kword x 16-bit)

Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the applicatio

文件：102.82 Kbytes 页数：17 Pages

HitachiHitachi Semiconductor

日立日立公司