HM5551

NPN EPITAXIAL PLANAR TRANSISTOR

Description TheHM5551isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. Features •Highcollector-emitterbreakdownvoltage.VCEO>160V(@IC=1mA) •ComplementstoPNPtypeHM5401

HMBT5551

NPNEPITAXIALPLANARTRANSISTOR(forgeneralpurposeapplicationsrequiringhighBreakdownVoltages)

Description TheHMBT5551isdesignedforgeneralpurposeapplicationsrequiringhighBreakdownVoltages.

HN5551

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications????

NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications.

HSMCJ5551

PlasticSurfaceMount5AmpStandardRectifierSeries(200-1000V)

IPS5551T

FULLYPROTECTEDHIGHSIDEPOWERMOSFETSWITCH

KMBT5551

NPNTransistors

Features ●HighVoltageTransistors ●Pb-FreePackagesareAvailable

KMST5551

NPNTransistors

■Features ●SmallSurfaceMountPackage ●IdealforMediumPowerAmplificationandSwitching ●ComplementarytoMMST5401

KST5551

AmplifierTransistor

AmplifierTransistor •Collector-EmitterVoltage:VCEO=160V •CollectorPowerDissipation:PC(max)=350mW

KST5551MTF

FAIRCHILDSmallSignalTransistors

KST5551MTF

AmplifierTransistor

AmplifierTransistor •Collector-EmitterVoltage:VCEO=160V •CollectorPowerDissipation:PC(max)=350mW