| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=16mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=21mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Verylowon-stateresistance •Fastswitching •Highthermalcyclingperformance •Lowthermalresistance •Logiclevel | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=18mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel30V(D-S)MOSFET FEATURES •TrenchFET®powerMOSFET •Packagewithlowthermalresistance •100RgandUIStested | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HMSEMI |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VBsemi |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
HMSEMI |
2022+ |
TO-220 |
2000 |
原厂代理 终端免费提供样品 |
询价 | ||
HM |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
询价 | ||
VBsemi |
21+ |
TO-220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Hmsemi |
23+ |
TO-220 |
18384 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
HMSEMI |
24+ |
NA/ |
53250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
HMSEMI |
23+ |
TO-220 |
6800 |
专注配单,只做原装进口现货 |
询价 | ||
VBsemi |
24+ |
TO-220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
H |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 |
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