IRGB4056DPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(ON)TrenchIGBTTechnology •Lowswitchinglosses •MaximumJunctiontemperature175°C •5µSshortcircuitSOA •SquareRBSOA •100ofthepartstestedfor4Xratedcurrent(ILM) •PositiveVCE(ON)Temperatureco-efficient •UltrafastsoftRecoveryCo-PakDiode •T

IRGB4056DPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRGI4056DPBF

LowVCE(ON)trenchIGBTtechnology

IRGS4056DPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(ON)TrenchIGBTTechnology •Lowswitchinglosses •MaximumJunctiontemperature175°C •5µSshortcircuitSOA •SquareRBSOA •100ofthepartstestedfor4Xratedcurrent(ILM) •PositiveVCE(ON)Temperatureco-efficient •UltrafastsoftRecoveryCo-PakDiode •T

IRGS4056DPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

LP4056

1A/800mAStandaloneLinearLi-IonBatteryCharger

GeneralDescription TheLP4056isacompleteconstant-current/constant-voltage linearchargerforsinglecelllithium-ionbatteries.ItsESOP8 packageandlowexternalcomponentcountmaketheLP4056 ideallysuitedforportableapplications.Furthermore,the LP4056isspecificallydesignedt

LP4056H

1AStandaloneLinearLi-IonBatteryCharger

MA4056

Siliconplanartype

Siliconplanartype Forstabilizationofpowersupply ■Features •Highreliability,achievedbytheDHDstructure •Allowingtoinserttoa5mmpitchhole •Finelydividedzener-voltagerank •Sharprisingperformance •Widevoltagerange:VZ=2.0Vto39V

MAZ4056

Siliconplanartype

MAZ4056

Siliconplanartype

Siliconplanartype Forstabilizationofpowersupply ■Features •Extremelylownoisevoltagecausedfromdiode(1/3to1/10ofourconventionalMAZ4000series) •Extremelygoodrisingperformance(inthelow-currentrange) •Easy-to-identifythezener-voltagerankbythecolorbands •Easy