4A Multi-Type Battery Charge Management IC

文件：509.29 Kbytes 页数：11 Pages

HMSEMI

华之美半导体

PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSE™ rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperatu

文件：785.49 Kbytes 页数：9 Pages

IRF

PDP TRENCH IGBT

文件：321.66 Kbytes 页数：7 Pages

IRF

PDP TRENCH IGBT

Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperatu

文件：344.59 Kbytes 页数：7 Pages

IRF