TN0610

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

TP0610K

P-Channel60V(D-S)MOSFET

Description:P-Channel,60V(D-S)MOSFET Package:SOT-23 PinOut:Identical

TP0610K

P-Channel60-V(D-S)MOSFET

Description:P-Channel,60V(D-S)MOSFET Package:SOT-23 PinOut:Identical

TP0610K

P-Channel60-V(D-S)MOSFET

TP0610K

1.7Q,60VP-ChannelMOSFET

ProductSummary @Vdss=60V @®ID=05A @RDS(ON)=1.70@VGs=-10V

TP0610K

P-Channel60V(D-S)MOSFET

TP0610KL

P-Channel60-V(D-S)MOSFET

FEATURES ●TrenchFETPowerMOSFET ●ESDProtected:2000V APPLICATIONS ●Drivers:Relays,Solenoids,Lamps,Hammers,   Displays,Memories,Transistors,etc. ●BatteryOperatedSystems ●PowerSupply,ConverterCircuits ●MotorControl

TP0610L

P-Channel60-V(D-S)MOSFET

FEATURES •High-SideSwitching •LowOn-Resistance:8
•LowThreshold:−1.9V •FastSwitchingSpeed:16ns •LowInputCapacitance:15pF BENEFITS •EaseinDrivingSwitches •LowOffset(Error)Voltage •Low-VoltageOperation •High-SpeedSwitching •EasilyDrivenWithoutBuffer AP

TP0610L

P-Channel60-V(D-S)MOSFET

Description:P-Channel,60V(D-S)MOSFET Package:SOT-23 PinOut:Identical

TP0610T

P-ChannelEnhancementModeVerticalDMOSFETs

GeneralDescription Thislowthresholdenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinpu