TP0610T中文资料SUTEX数据手册PDF规格书
TP0610T规格书详情
General Description
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coeffcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
特性 Features
► High input impedance and high gain
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► Free from secondary breakdown
Applications
► Logic level interfaces - ideal for TTL and CMOS
► Solid state relays
► Battery operated systems
► Photo voltaic systems
► Analog switches
► Power management
► Telecom switches
产品属性
- 型号：
TP0610T
- 功能描述：
MOSFET 60V 0.12A 0.36W
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi/台湾微碧 |
25+ |
SOT-23 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
VISHAY/威世 |
2450+ |
SOT-23 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
TP0610T-T1 |
25+ |
1756 |
1756 |
询价 | |||
VISHAY |
0652+ |
SOT23 |
1600 |
原装现货海量库存欢迎咨询 |
询价 | ||
VISHAY/威世 |
24+ |
SOT23 |
60000 |
全新原装现货 |
询价 | ||
VISHAY |
24+ |
SOT23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
VISHAY/威世 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
VISHAY/威世 |
24+ |
SOT-23 |
98000 |
原装现货假一罚十 |
询价 | ||
MICROCHIP(美国微芯) |
2021+ |
SOT-23-3 |
499 |
询价 | |||
Vishay(威世) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 |
