P-Channel 60-V (D-S) MOSFET

FEATURES • High-Side Switching • Low On-Resistance: 8
• Low Threshold: −1.9 V • Fast Switching Speed: 16 ns • Low Input Capacitance: 15 pF BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Switching • Easily Driven Without Buffer AP

文件：62.88 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

P-Channel 60-V (D-S) MOSFET

Description: P-Channel, 60 V (D-S) MOSFET Package: SOT-23 Pin Out: Identical

文件：75.94 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

文件：453.95 Kbytes 页数：4 Pages

SUTEX

P-Channel 60-V (D-S) MOSFET

FEATURES • High-Side Switching • Low On-Resistance: 8
• Low Threshold: −1.9 V • Fast Switching Speed: 16 ns • Low Input Capacitance: 15 pF BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Switching • Easily Driven Without Buffer AP

文件：62.88 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

文件：656.7 Kbytes 页数：5 Pages

SUTEX