P-Channel Enhancement Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

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SUTEX

SMD 5.0x3.2 18MHz Crystal Unit

Features: Surface Mount Seam Weld Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Description and Applications: Surface mount 5.0mmx3.2mm crystal unit for use in wireless telecommunications devices, especially for a need of ultra miniatu

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TAI-SAW

嘉硕科技

Switchmode Full Plastic Dual Ultrafast Power Rectifiers

…Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ＊ High Surge Capacity ＊ Low Power Loss, High efficiency ＊ Glass Passivated chip junctions ＊ 150℃ Operating Junction Temperature ＊ Low Stored Charge

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MOSPEC

统懋

N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

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Temic