Hall open loop current sensor

文件：3.02814 Mbytes 页数：1 Pages

YHDC

德昌电气设备

MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES

FEATURES • Multilayer inductor made of advanced ceramics with low-resistivity silver used as internal conductors provides excellent Q and SRF characteristics. • Designed to address surface mount inductor needs for applications above 100MHz. • Multilayer block structure ensures outstanding relia

文件：107.57 Kbytes 页数：2 Pages

TAIYO-YUDEN

太阳诱电

Heterojunction Bipolar Transistor Technology (InGaP HBT)

40--4000 MHz, 19.5 dB 25 dBm InGaP HBT GPA The MMG3014NT1 is a general purpose amplifier that is input and output internally prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from

文件：497.32 Kbytes 页数：16 Pages

恩XP

MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES

FEATURES • Multilayer inductor made of advanced ceramics with low-resistivity silver used as internal conductors provides excellent Q and SRF characteristics. • Designed to address surface mount inductor needs for applications above 100MHz. • Multilayer block structure ensures outstanding relia

文件：107.57 Kbytes 页数：2 Pages

TAIYO-YUDEN

太阳诱电

MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES

FEATURES • Multilayer inductor made of advanced ceramics with low-resistivity silver used as internal conductors provides excellent Q and SRF characteristics. • Designed to address surface mount inductor needs for applications above 100MHz. • Multilayer block structure ensures outstanding relia

文件：107.57 Kbytes 页数：2 Pages

TAIYO-YUDEN

太阳诱电

MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES

FEATURES • Multilayer inductor made of advanced ceramics with low-resistivity silver used as internal conductors provides excellent Q and SRF characteristics. • Designed to address surface mount inductor needs for applications above 100MHz. • Multilayer block structure ensures outstanding relia

文件：107.57 Kbytes 页数：2 Pages

TAIYO-YUDEN

太阳诱电

Heterostructure Field Effect Transistor (GaAs HFET)

250--4000 MHz, 12 dB 22.5 dBm GaAs HFET GPA The MMH3111NT1 is a general purpose amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from

文件：468.79 Kbytes 页数：15 Pages

恩XP

Heterojunction Bipolar Transistor Technology (InGaP HBT)

40--4000 MHz, 19.5 dB 25 dBm InGaP HBT GPA The MMG3014NT1 is a general purpose amplifier that is input and output internally prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from

文件：497.32 Kbytes 页数：16 Pages

恩XP

Gallium Arsenide CATV Integrated Amplifier Module

Description • 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module Features • Specified for 79-, 112- and 132-Channel Loading • Excellent Distortion Performance • Built-in Input Diode Protection • GaAs FET Transistor Technology • Unconditi

文件：181.51 Kbytes 页数：9 Pages

恩XP

Multilayer Chip Inductors for High Frequency

FEATURES • Multilayer inductor made of advanced ceramics with low-resistivity silver used as internal conductors provides excellent Q and SRF characteristics. • Designed to address surface mount inductor needs for applications above 100MHz. • Multilayer block structure ensures outstanding relia

文件：143.33 Kbytes 页数：1 Pages

TAIYO-YUDEN

太阳诱电