HJ45H11

PNP EPITAXIAL PLANAR TRANSISTOR

Description TheHJ45H11isdesignedforvariousspecificandgeneralpurposeapplications,suchas:outputanddriverstagesofamplifiersoperatingatfrequenciesfromDCtogreaterthan1MHz;series,shuntandswitchingregulators;lowandhighfrequencyinverters/converters;andmanyothers.

HJ45H11

PNP EPITAXIAL PLANAR TRANSISTOR;

Description\nThe HJ45H11 is designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz;series, shunt and switching regulators; low and high frequency inverters/converters; and many others.

HJ45H11

Bipolar Transistor;

KSE45H11

GeneralPurposePowerSwitchingApplications

GeneralPurposePowerSwitchingApplications •LowCollector-EmitterSaturationVoltage:VCE(sat)=-1V(MAX)@-8A •FastSwitchingSpeeds •ComplementtoKSE44H

KSE45H11

iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage :V(BR)CEO=-80V(Min) ·HighDCCurrentGain :hFE=60(Min)@(VCE=-1V,IC=-2A) ·LowSaturationVoltage- :VCE(sat)=-1.0V(Max)@(IC=-8A,IB=-0.4A) ·ComplementtoTypeKSE44H11 ·MinimumLot-to-Lotvariationsforrobustdevice performance

KSE45H11TU

GeneralPurposePowerSwitchingApplications