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HIP6601BECBZ集成电路(IC)的栅极驱动器规格书PDF中文资料

HIP6601BECBZ
厂商型号

HIP6601BECBZ

参数属性

HIP6601BECBZ 封装/外壳为8-SOIC(0.154",3.90mm 宽)裸露焊盘;包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

Synchronous Rectified Buck MOSFET Drivers

封装外壳

8-SOIC(0.154",3.90mm 宽)裸露焊盘

文件大小

258.029 Kbytes

页面数量

12

生产厂商 Intersil Corporation
企业简称

INTERSIL

中文名称

Intersil Corporation官网

原厂标识
INTERSIL
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-8-4 15:35:00

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HIP6601BECBZ规格书详情

The HIP6601B, HIP6603B and HIP6604B are high-frequency,

dual MOSFET drivers specifically designed to drive two power

N-Channel MOSFETs in a synchronous rectified buck converter

topology. These drivers combined with a HIP63xx or the ISL65xx

series of Multi-Phase Buck PWM controllers and MOSFETs form

a complete core-voltage regulator solution for advanced

microprocessors.

The HIP6601B drives the lower gate in a synchronous rectifier to

12V, while the upper gate can be independently driven over a range

from 5V to 12V. The HIP6603B drives both upper and lower gates

over a range of 5V to 12V. This drive-voltage flexibility provides

the advantage of optimizing applications involving trade-offs

between switching losses and conduction losses. The HIP6604B

can be configured as either a HIP6601B or a HIP6603B.

The output drivers in the HIP6601B, HIP6603B and HIP6604B

have the capacity to efficiently switch power MOSFETs at

frequencies up to 2MHz. Each driver is capable of driving a

3000pF load with a 30ns propagation delay and 50ns transition

time. These products implement bootstrapping on the upper gate

with only an external capacitor required. This reduces

implementation complexity and allows the use of higher

performance, cost effective, N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both MOSFETs

from conducting simultaneously.

特性 Features

• Drives Two N-Channel MOSFETs

• Adaptive Shoot-Through Protection

• Internal Bootstrap Device

• Supports High Switching Frequency

- Fast Output Rise Time

- Propagation Delay 30ns

• Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages

• Dual Gate-Drive Voltages for Optimal Efficiency

• Three-State Input for Output Stage Shutdown

• Supply Undervoltage Protection

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat No

Leads—Product Outline.

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile.

• Pb-Free (RoHS Compliant)

Applications

• Core Voltage Supplies for Intel Pentium® III, AMD® Athlon™

Microprocessors

• High Frequency Low Profile DC/DC Converters

• High Current Low Voltage DC/DC Converters

产品属性

  • 产品编号:

    HIP6601BECBZ

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    管件

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    10.8V ~ 13.2V

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    20ns,20ns

  • 工作温度:

    0°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-SOIC(0.154",3.90mm 宽)裸露焊盘

  • 供应商器件封装:

    8-SOIC-EP

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

供应商 型号 品牌 批号 封装 库存 备注 价格
INTERSIL
25+
SOP
3200
全新原装、诚信经营、公司现货销售
询价
INTERSIL
24+
原装
2300
绝对原装自家现货!真实库存!欢迎来电!
询价
Intersil
22+
8SOICEP
9000
原厂渠道,现货配单
询价
Intersil
24+
8-SOIC-EP
65200
一级代理/放心采购
询价
INTERSIL
24+
SOP
6980
原装现货,可开13%税票
询价
INTERSI
18+
SOP8
85600
保证进口原装可开17%增值税发票
询价
INTERSIL
23+
SOP-8
3600
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
Renesas Electronics America In
25+
8-SOIC(0.154 3.90mm 宽)裸露
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
INTERSIL
24+
SOP-8
4450
只做原装正品现货 欢迎来电查询15919825718
询价
Intersil
23+
8-SOIC-EP
7300
专注配单,只做原装进口现货
询价