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HIP6601BECBZ集成电路(IC)的栅极驱动器规格书PDF中文资料

厂商型号 |
HIP6601BECBZ |
参数属性 | HIP6601BECBZ 封装/外壳为8-SOIC(0.154",3.90mm 宽)裸露焊盘;包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8SOIC |
功能描述 | Synchronous Rectified Buck MOSFET Drivers |
封装外壳 | 8-SOIC(0.154",3.90mm 宽)裸露焊盘 |
文件大小 |
258.029 Kbytes |
页面数量 |
12 页 |
生产厂商 | Intersil Corporation |
企业简称 |
INTERSIL |
中文名称 | Intersil Corporation官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2025-8-4 15:35:00 |
人工找货 | HIP6601BECBZ价格和库存,欢迎联系客服免费人工找货 |
HIP6601BECBZ规格书详情
The HIP6601B, HIP6603B and HIP6604B are high-frequency,
dual MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous rectified buck converter
topology. These drivers combined with a HIP63xx or the ISL65xx
series of Multi-Phase Buck PWM controllers and MOSFETs form
a complete core-voltage regulator solution for advanced
microprocessors.
The HIP6601B drives the lower gate in a synchronous rectifier to
12V, while the upper gate can be independently driven over a range
from 5V to 12V. The HIP6603B drives both upper and lower gates
over a range of 5V to 12V. This drive-voltage flexibility provides
the advantage of optimizing applications involving trade-offs
between switching losses and conduction losses. The HIP6604B
can be configured as either a HIP6601B or a HIP6603B.
The output drivers in the HIP6601B, HIP6603B and HIP6604B
have the capacity to efficiently switch power MOSFETs at
frequencies up to 2MHz. Each driver is capable of driving a
3000pF load with a 30ns propagation delay and 50ns transition
time. These products implement bootstrapping on the upper gate
with only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both MOSFETs
from conducting simultaneously.
特性 Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Ld SOIC and EPSOIC and 16 Ld QFN Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Undervoltage Protection
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN—Quad Flat No
Leads—Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
• Pb-Free (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD® Athlon™
Microprocessors
• High Frequency Low Profile DC/DC Converters
• High Current Low Voltage DC/DC Converters
产品属性
- 产品编号:
HIP6601BECBZ
- 制造商:
Renesas Electronics America Inc
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
管件
- 驱动配置:
半桥
- 通道类型:
同步
- 栅极类型:
N 沟道 MOSFET
- 电压 - 供电:
10.8V ~ 13.2V
- 输入类型:
非反相
- 上升/下降时间(典型值):
20ns,20ns
- 工作温度:
0°C ~ 125°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
8-SOIC(0.154",3.90mm 宽)裸露焊盘
- 供应商器件封装:
8-SOIC-EP
- 描述:
IC GATE DRVR HALF-BRIDGE 8SOIC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERSIL |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
INTERSIL |
24+ |
原装 |
2300 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | ||
Intersil |
22+ |
8SOICEP |
9000 |
原厂渠道,现货配单 |
询价 | ||
Intersil |
24+ |
8-SOIC-EP |
65200 |
一级代理/放心采购 |
询价 | ||
INTERSIL |
24+ |
SOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
INTERSI |
18+ |
SOP8 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
INTERSIL |
23+ |
SOP-8 |
3600 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
Renesas Electronics America In |
25+ |
8-SOIC(0.154 3.90mm 宽)裸露 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
INTERSIL |
24+ |
SOP-8 |
4450 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
Intersil |
23+ |
8-SOIC-EP |
7300 |
专注配单,只做原装进口现货 |
询价 |