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BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BD237

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

BD237

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD237

iscSiliconNPNPowerTransistor

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD237

SiliconNPNtransistorinaTO-126PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features ComplementarypairwithBD238. Applications Mediumpowerlinearandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

BD237

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

TEL

TRANSYS Electronics Limited

BD237

NPNpowertransistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypesareBD236andBD238respectively. Features ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD237

TO-126Plastic-EncapsulateTransistors

FEATURES ComplementtoBD234/BD236/BD238respectively

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

BD237

LowvoltageNPNpowertransistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD237

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BD237

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD237

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

BD237

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

ETC1List of Unclassifed Manufacturers

未分类制造商

BD237

NPNEpitaxialPlanarTransistors

NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

BD237

MediumPowerLinearandSwitchingApplications

MediumPowerLinearandSwitchingApplications •ComplementtoBD234/236/238respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BD237

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor ...designedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc

MotorolaMotorola, Inc

摩托罗拉

BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

BD237D

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedformediumpowerlinearandswitchingapplications.

DCCOMDc Components

直流元件直流元件有限公司

BD237G

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    HIN237ACB-T

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商型号品牌批号封装库存备注价格
HARRIS
24+25+/26+27+
设备接口IC
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
INTERSIL
03/04+
SOP24
152
全新原装100真实现货供应
询价
HARRIS
23+
SO-24
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
INTERSIL
23+
SOP24
6000
询价
INTERSIL
1116+
SOP24
6869
绝对原装现货
询价
INTERSIL
23+
SOP-24P
18000
询价
HIP
23+
SOP24
1947
询价
INTERSIL
22+
SMD24
575
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
INTERSI
2020+
SOP24
2070
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
HARRIS
22+
SMD
3200
绝对原装自家现货!真实库存!欢迎来电!
询价
更多HIN237ACB-T供应商 更新时间2024-5-20 16:16:00