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G7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTP7N60C3DandHGT1S7N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

G7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

G7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTD7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe

HARRIS

HARRIS corporation

HGTD7N60C3S

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTD7N60C3S

14A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe

HARRIS

HARRIS corporation

HGTD7N60C3S

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe

HARRIS

HARRIS corporation

HGTP7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTP7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTP7N60C3DandHGT1S7N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HGTP7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO252
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
CRM/华润微
1年内
TO-251
150000
类别: 12V~421V N沟道MOS管
询价
HG/HX
23+
SOP8
50000
全新原装正品现货,支持订货
询价
Hammond
2020+
N/A
155
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询价
Hammond
22+
NA
155
加我QQ或微信咨询更多详细信息,
询价
L-com Connectivity
2022+
17
全新原装 货期两周
询价
华冠
23+
SMD
8000
原装正品
询价
HGSEMI(华冠)
21+
SOT-23-5
10810
25条原装现货/保证
询价
HGSEMI(华冠)
2117+
SOT-23-5
315000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
HGSEMI(华冠)
2021+
SOT-23-5
3344
询价
更多HGTU7N60C3功率三极管供应商 更新时间2024-5-25 16:45:00