G7N60C3D中文资料仙童半导体数据手册PDF规格书
G7N60C3D规格书详情
General Description
The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Features
• 14A, 600V at TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time...................140ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
OmronElectronicsInc-EMCD |
2022 |
RELAYPWRDPDT24VDC |
3268 |
原厂原装正品,价格超越代理 |
询价 | ||
进口原装 |
23+ |
3167 |
1015 |
全新原装现货 |
询价 | ||
beI |
SMD |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
IR |
09+ |
TO-247 |
62 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+ |
TO-247 |
8000 |
只做原装现货 |
询价 | ||
FAI |
1816+ |
. |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
GOFORD(谷峰) |
2112+ |
SOT-23-3L |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
GOFORD |
50 |
询价 | |||||
Omron Electronics Inc-EMC Div |
2022+ |
原厂封装 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IR |
22+ |
TO-247 |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
询价 |