G7N60C中文资料INTERSIL数据手册PDF规格书

The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

特性 Features

• 14A, 600V at TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss