14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop var

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop var

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Intersil

14A, 600V, UFS Series N-Channel IGBTs

Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lowe

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HARRIS

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

文件：176.05 Kbytes 页数：7 Pages

Intersil

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

文件：547.54 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varie • 14A, 600V at TC = 25°C\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C\n• Short Circuit Rating\n• Low Conduction Loss ;

ONSEMI

安森美半导体

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description\nThe HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The • 14A, 600V at TC = 25°C\n• 600V Switching SOA Capability\n• Typical Fall Time...................140ns at TJ = 150°C\n• Short Circuit Rating\n• Low Conduction Loss\n• Hyperfast Anti-Parallel Diode ;

ONSEMI

安森美半导体