G7N60C中文资料HARRIS数据手册PDF规格书

描述 Description

The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

特性 Features

• 14A, 600V at TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss