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HGTP7N60C3中文资料PDF规格书

HGTP7N60C3
厂商型号

HGTP7N60C3

参数属性

HGTP7N60C3 封装/外壳为TO-220-3;包装为管件;类别为分立半导体产品 > 晶体管 - UGBT、MOSFET - 单;产品描述:IGBT 600V 14A 60W TO220AB

功能描述

14A, 600V, UFS Series N-Channel IGBTs

文件大小

166.04 Kbytes

页面数量

8

生产厂商 Fairchild Semiconductor
企业简称

Fairchild仙童半导体

中文名称

飞兆/仙童半导体公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-6-23 20:00:00

HGTP7N60C3规格书详情

The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features

• 14A, 600V at TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss

产品属性

  • 产品编号:

    HGTP7N60C3D

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2V @ 15V,7A

  • 开关能量:

    165µJ(开),600µJ(关)

  • 输入类型:

    标准

  • 测试条件:

    480V,7A,50欧姆,15V

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220-3

  • 描述:

    IGBT 600V 14A 60W TO220AB

供应商 型号 品牌 批号 封装 库存 备注 价格
Fairchild(飞兆/仙童)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
FAIRCHILD/仙童
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
INTERSIL
21+
35200
一级代理/放心采购
询价
INTERSIL
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
询价
Intersil
08+(pbfree)
TO-220
8866
询价
FAIRCHILD
23+
TO-220
9526
询价
INTERSIL
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
FAIRCHI
2020+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
HARRIS
24+25+/26+27+
车规-晶体管
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
仙童/INTERSI
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价