首页>HGTP7N60C3>规格书详情

HGTP7N60C3中文资料HARRIS数据手册PDF规格书

HGTP7N60C3
厂商型号

HGTP7N60C3

参数属性

HGTP7N60C3 封装/外壳为TO-220-3;包装为管件;类别为分立半导体产品 > 晶体管 - UGBT、MOSFET - 单;产品描述:IGBT 600V 14A 60W TO220AB

功能描述

14A, 600V, UFS Series N-Channel IGBTs

文件大小

153.51 Kbytes

页面数量

6

生产厂商 Harris Corporation
企业简称

HARRIS

中文名称

Harris Corporation

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-9-25 12:07:00

HGTP7N60C3规格书详情

Description

The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features

• 14A, 600V at TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss

产品属性

  • 产品编号:

    HGTP7N60C3D

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2V @ 15V,7A

  • 开关能量:

    165µJ(开),600µJ(关)

  • 输入类型:

    标准

  • 测试条件:

    480V,7A,50欧姆,15V

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220-3

  • 描述:

    IGBT 600V 14A 60W TO220AB

供应商 型号 品牌 批号 封装 库存 备注 价格
Intersil
23+
原厂原装
1400
全新原装
询价
INTERSIL
05+
原厂原装
11563
只做全新原装真实现货供应
询价
INTERSIL
23+
TO-220
30000
代理全新原装现货,价格优势
询价
FAIRCHI
2020+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
24+
N/A
79000
一级代理-主营优势-实惠价格-不悔选择
询价
仙童/INTERSI
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价
NEXPERIA/安世
23+
SOT669
69820
终端可以免费供样,支持BOM配单!
询价
Fairchild(飞兆/仙童)
23+
NA/
8735
原厂直销,现货供应,账期支持!
询价
INTERSIL
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
INTERSIL
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
询价