首页 >HGTG40N60C3>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HGTG40N60C3 | 75A, 600V, UFS Series N-Channel IGBT 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much 文件：122.53 Kbytes 页数：8 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | |
HGTG40N60C3 | 75A, 600V, UFS Series N-Channel IGBT 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lo 文件：79.19 Kbytes 页数：7 Pages | INTERSIL | INTERSIL | |
HGTG40N60C3 | 75A, 600V, UFS Series N-Channel IGBT | Renesas 瑞萨 | Renesas | |
HGTG40N60C3 | 75A, 600V, UFS Series N-Channel IGBT | ONSEMI 安森美半导体 | ONSEMI |
详细参数
- 型号：
HGTG40N60C3
- 功能描述：
IGBT 晶体管
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
05+ |
原厂原装 |
5266 |
只做全新原装真实现货供应 |
询价 | ||
Intersil |
24+ |
TO-247 |
8866 |
询价 | |||
FAI |
23+ |
65480 |
询价 | ||||
INTERSIL |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
FSC |
02+ |
TO-247 |
1634 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INTERSIL |
2023+ |
SMD |
9287 |
安罗世纪电子只做原装正品货 |
询价 | ||
26+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
FSC |
23+ |
TO-247 |
1634 |
全新原装正品现货,支持订货 |
询价 |
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