首页 >HG1903RD-RSP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12.8A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=105mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SingleN-channelTrenchMOSFET100V,12.8A,105m(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
SingleN-channelTrenchMOSFET100V,12A,110m(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
SingleN-channelTrenchMOSFET100V,12A,110m(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
SingleN-channelTrenchMOSFET100V,12.8A,105m(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
SingleN-channelTrenchMOSFET100V,12.8A,105m(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
SingleN-channelTrenchMOSFET100V,3.3A,110m(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
SingleN-channelTrenchMOSFET100V,3.3A,110m(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TAPECARRIERLOWNOISEGaAsFET????
| MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi |
详细参数
- 型号：
HG1903RD-RSP
- 制造商：
L COM
- 功能描述：
ANT,Rubber Duck 1.9GHz 3dBi
- 制造商：
L-com Inc
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALEPH |
23+ |
SOP6 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IDEC |
新 |
2 |
全新原装 货期两周 |
询价 | |||
HANDOUK |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
2022+ |
7 |
全新原装 货期两周 |
询价 | ||||
IDEC |
24+ |
只做原装 |
985 |
进口原装假一赔百,现货热卖 |
询价 | ||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
RAPS |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
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