40A, 600V, UFS Series N-Channel IGBTs

The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction\nloss of a bipolar transistor. Th • 40A, 600V at TC = 25℃\n• 600V Switching SOA Capability\n• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150℃\n• Short Circuit Rated\n• Low Conduction Loss\n• Related Literature\n- TB334 “Guidelines for Soldering Surface Mount\nComponents to PC Boards”;

Renesas

瑞萨

40A, 600V, UFS Series N-Channel IGBTs

The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. T

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Fairchild

仙童半导体

40A, 600V, UFS Series N-Channel IGBTs

The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor

文件：138.78 Kbytes 页数：6 Pages

Intersil

40A, 600V, UFS Series N-Channel IGBTs

The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. T

文件：223.86 Kbytes 页数：7 Pages

Fairchild

仙童半导体