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HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

Intersil

Intersil Corporation

HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG20N60B3D

40A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG20N60B3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

Intersil

Intersil Corporation

HGTP20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconduction lossofabipolartransistor

Intersil

Intersil Corporation

HGTP20N60B3

40A,600V,UFSSeriesN-ChannelIGBTs

TheHGT1S20N60B3S,theHGTP20N60B3andtheHGTG20N60B3areGenerationIIIMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    HG20N60B3

  • 制造商:

    FAIRCHILD

  • 功能描述:

    SEMICONDUCTOR 600V 40 AMP

供应商型号品牌批号封装库存备注价格
HAR
24+
SOT
90
询价
HARRIS
23+
TO-3P
5000
原装正品,假一罚十
询价
HARRIS/哈里斯
23+
TO3P
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
22+
TO-3PL
6000
十年配单,只做原装
询价
F
25+
TO3P
4500
全新原装、诚信经营、公司现货销售
询价
FAIRCHILD/仙童
23+
TO-3PL
6000
原装正品,支持实单
询价
FAIRCHILD
1932+
TO-247
222
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
FAIRCHI
23+
TO-247
8560
受权代理!全新原装现货特价热卖!
询价
FAIRCHILD/仙童
24+
NA/
1
优势代理渠道,原装正品,可全系列订货开增值税票
询价
FAIRCHILD/仙童
23+
TO-3PL
8400
专注配单,只做原装进口现货
询价
更多HG20N60B3供应商 更新时间2025-7-27 10:50:00