BD5210G-1TR

Marking：hG；Package：SSOP5；Free Time Delay Setting CMOS Voltage Detector (Reset) IC

GeneralDescription ROHM'sFreeTimeDelaySettingCMOSVoltage DetectorICsarehighlyaccurate,withultra-lowcurrent consumptionfeaturethatusesCMOSprocess.Delay timesettingcanbecontrolbyanexternalcapacitor.The lineupincludesN-channelopendrainoutput (BD52xxG-1).Thede

BZX585-C30

Marking：HG；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdissipation:≤40W •Totalpowerdissipation:≤300mW •Wideworkingvoltagerange:no

BZX585-C30

Marking：HG；Package：SOD523；Voltage regulator diodes

Featuresandbenefits Non-repetitivepeakreversepower dissipation:40W Totalpowerdissipation:300mW AEC-Q101qualified Wideworkingvoltagerange:nominal 2.4Vto75V(E24range) Twotoleranceseries:2and5 Lowdifferentialresistance

ESD13V12D-A

Marking：HG；Package：SOD-123；Transient Voltage Suppressors for ESD Protection

Features 1000WattsPeakPulsePowerperLine(tp=8/20μs) 200WattsPeakPulsePowerperLine(tp=10/1000μs) ProtectsoneI/Olineorpowerline Lowclampingvoltage Workingvoltages:5Vto190V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact) IEC61000-4-4(EFT)80A(5/

LT4ME6.0A

Marking：HG；Package：DO-219AA；SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

FEATURES •Forsurfacemountedapplications •Reliablelowcostconstructionutilizingmoldedplastictechnique. •TypicalIRlessthan1uAabove10V •Fastresponsetime:typicallylessthan1.0nsforUni-direction,less than5.0nsforBi-direction,formVoltstoBVmin •RoHScompliant •IE

P4SMAJ6.0A

Marking：HG；Package：SMA；400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 400WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

PEC2305M1Q_R1_00001

Marking：HG；Package：DFN1006-2L；VERY LOW CAPACITANCE ESD Protection

Features IEC61000-4-2(ESD):±15kVAir,±8kVContact IEC61000-4-4(EFT):20A(5/50ns) IEC61000-4-5(Lightning):2A(8/20uS) Lowleakagecurrent,maximumof0.1uAatratedvoltage Lowclampingvoltage LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC6

PESD2ETH100-T

Marking：HG；Package：SOT23；ESD protection for In-vehicle networks

1.Generaldescription FullyOPENAlliance100BASE-T1compliantElectrostaticdischarge(ESD)protectiondevicein asmallSOT23surface-mountedplasticpackagedesignedtoprotecttwoautomotivein-vehicle networkbuslinesfromthedamagecausedbyESDandothertransients. 2.Featuresandb

PESD2ETH100T-Q

Marking：HG；Package：SOT23；ESD protection for in-vehicle networks

1.Generaldescription FullyOPENAlliance100BASE-T1compliantElectrostaticdischarge(ESD)protectiondevicein asmallSOT23surface-mountedplasticpackage,designedtoprotecttwoautomotivein-vehicle networkbuslinesfromthedamagecausedbyESDandothertransients. 2.Featuresand

PMV48XPA2

Marking：HG；Package：SOT23；20 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23(TO-236AB) Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •ExtendedtemperaturerangeTj=175°C •TrenchMOSFET