N-Channel Enhancement Mode Field Effect Transistor

General Description This Power MOSFET is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge

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HUASHAN

华汕电子器件

场效应管

Huashan

华汕电子器件

Silicon epitaxial planar type

Silicon epitaxial planar type For super high speed switching For small current rectification ■ Features • Two MA3X721 (MA721) is contained in one package (series connection) • Forward current (Average) IF(AV) = 200 mA (per single diode) rectification is possible

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PANASONIC

松下

Integrated Circuit Audio Power Amp, 2W

Description: TheNTE740A is an Audio Power Amplifier in a 14–Lead DIP type package designed for minimal external component requirements. Features: ● Low Distortion ● Low Quiescent Current ● 34dB Internally Fixed Gain ● High Input Impedance ● Thermal Overload Protection ● Output Short Circui

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NTE

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. FEATURES • Low forward volt drop • Fast switching • Reverse surge capability • High thermal c

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PHI

PHI