HFP5N80规格书应用电路批发供应HUASHAN-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
HFP5N80	文件：665.77 Kbytes Page：6 Pages	N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy 文件：665.77 Kbytes 页数：6 Pages	HUASHAN 华汕电子器件	HUASHAN
HFP5N80	文件：218.13 Kbytes Page：8 Pages	Superior Avalanche Rugged Technology FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 30 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V ❐ 文件：218.13 Kbytes 页数：8 Pages	SEMIHOW	SEMIHOW
HFP5N80	文件：300 bytes Page：1 Pages	场效应管	Huashan 华汕电子器件	Huashan
HFS5N80	文件：207.86 Kbytes Page：7 Pages	Superior Avalanche Rugged Technology 文件：207.86 Kbytes 页数：7 Pages	SEMIHOW	SEMIHOW
KSM5N80	文件：1.75684 Mbytes Page：6 Pages	800V N-Channel MOSFET 文件：1.75684 Mbytes 页数：6 Pages	KERSEMI	KERSEMI
KSMF5N80	文件：1.74393 Mbytes Page：6 Pages	800V N-Channel MOSFET 文件：1.74393 Mbytes 页数：6 Pages	KERSEMI	KERSEMI

更多HFP5N80供应商更新时间2026-1-19 14:03:00