N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

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HUASHAN

华汕电子器件

650V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 15 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V ❐

文件：802.69 Kbytes 页数：8 Pages

SEMIHOW

场效应管

Huashan

华汕电子器件

650V N-Channel MOSFET

Features ❐ Originative New Design ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ 100 Avalanche Tested ❐ RoHS Compliant

文件：265.52 Kbytes 页数：9 Pages

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