HO-P-4014

CurrentTransducer

HS4014

HighPerformanceRelativeHumidityandTemperatureSensorwithMembraneandDigitalOutput

Features ■Humidityrange:0to100RH ■Automotivegrade,AEC-Q100qualified,Grade2, -40°Cto+105°C ■Industrialgrade,JEDECqualified,-40°Cto +125°C ■Hydrophobicmembrane,IP67rating ■DigitalI2CoutputwithCRCchecksum ■RHaccuracy:±1.5RH,typical(HS4011) ■14-bitresolutio

ISTM4014

Thyristor-ThyristorModule

FEATURES ·Thyristorforlinefrequency ·Planarpassivatedchip ·Long-termstability APPLICATIONS ·SoftstartACmotorcontrol ·DCMotorcontrol ·Powerconverter ·ACpowercontrol ·Lightingandtemperaturecontrol

K4014

SiliconN-ChannelMOSTypeDC/DCConverter,RelayDriveandMotorDriveApplications

DC-DCConverter,RelayDriveandMotorDriveApplications ●Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=5.0S(typ.) ●Lowleakagecurrent:IDSS=100µA(max)(VDS=720V) ●Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1m

KBPC4014

40AHIGHCURRENTSINGLE-PHASEBRIDGERECTIFIER

KBPC4014P

40AHIGHCURRENTSINGLE-PHASEBRIDGERECTIFIER

Features •DiffusedJunction •LowReverseLeakageCurrent •LowPowerLoss,HighEfficiency •ElectricallyIsolatedEpoxyCaseforMaximumHeatDissipation •CasetoTerminalIsolationVoltage2500V •RecognizedFile#E157705

KBPC4014PW

40AHIGHCURRENTSINGLE-PHASEBRIDGERECTIFIER

Features •DiffusedJunction •LowReverseLeakageCurrent •LowPowerLoss,HighEfficiency •ElectricallyIsolatedEpoxyCaseforMaximumHeatDissipation •CasetoTerminalIsolationVoltage2500V •RecognizedFile#E157705

KBPC4014S

40AHIGHCURRENTSINGLE-PHASEBRIDGERECTIFIER

Features •DiffusedJunction •LowForwardVoltageDrop •HighCurrentCapability •HighReliability •HighSurgeCurrentCapability •DesignedforSavingMountingSpace •RecognizedFile#E157705

KBPC4014W

40AHIGHCURRENTSINGLE-PHASEBRIDGERECTIFIER

LNK4014D

Energy-Efficient,AccuratePrimary-SideRegulatedCV/CCSwitcherforAdaptersandChargers

DramaticallySimplifiesCV/CCConverters •EliminatesoptocouplerandallsecondaryCV/CCcontrolcircuitry •Eliminatesallcontrolloopcompensationcircuitry AdvancedPerformanceFeatures •DynamicbasedrivetechnologyprovidesflexibilityinchoiceofBJT transistorbydynamicallyoptimi