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FRK9150D

26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25MΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9150H

26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25MΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRK9150R

26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs

Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25MΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSF9150D

22A,-100V,0.140Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSF9150R

22A,-100V,0.140Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYA9150D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSYA9150R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HV9150

HighVoltageOutputHystereticModeStepUpDC/DCController

GeneralDescription TheHV9150isahighoutputvoltagehystereticmodestepupDC/DCcontrollerthathasbothabuilt-inchargepumpconverterandalinearregulatorforawiderangeofinputvoltage.Thechargepumpconvertermodeisidealforbatterypoweredapplications.Theinternalconverte

SUTEX

Supertex, Inc

IRF9150

iscP-ChannelMOSFETTransistor

•DESCRIPTION •Bedesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.15Ω •

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRFP9150

25A,100V,0.150Ohm,P-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicon-gatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators, switchingc

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

IRH9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AE) InternationalRectifier’sRADHardHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenchara

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRH9150

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHM9150

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHM9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHN9150

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.120ohm,Id=-22A)

InternationalRectifier’sRADHardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHN9150

SimpleDriveRequirements

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRHN9150

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT

IRFInternational Rectifier

英飞凌英飞凌科技公司

J9150A

Aruba10GSFPLCLR10kmSMFXCVR

ROUTER-SWITCHRouter-switch Ltd.

香港越健科技有限公司

详细参数

  • 型号:

    HDM9150

  • 制造商:

    SHOULDER

  • 制造商全称:

    SHOULDER

  • 功能描述:

    Frequency Synthesizer

供应商型号品牌批号封装库存备注价格
ASTEC
23+
模块
130
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
ASTEC
23+
模块
3562
询价
ASTEC
6000
面议
19
 专营模块
询价
ASTEC
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
ASTEC
2018+
module
6000
全新原装正品现货,假一赔佰
询价
ASTEC
18+
2173
公司大量全新正品 随时可以发货
询价
ASTEC
2021+
模块
6430
原装现货/欢迎来电咨询
询价
ASTEC
2015
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
ASTEC
22+
SOT-2899&NBS
200
专营模块
询价
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
询价
更多HDM9150供应商 更新时间2024-6-5 16:30:00