Radiation Hardened Dual 4-Input NAND Gate

Description The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state. The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Fa

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INTERSIL

Radiation Hardened Dual 4-Input NAND Gate

Description The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state. The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic

文件：132.27 Kbytes 页数：9 Pages

INTERSIL

Radiation Hardened Dual 4-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

文件：378.04 Kbytes 页数：8 Pages

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CMOS Dual 4-Input NAND Gate

The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state.\nThe HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.\nThe HCTS • 3 Micron Radiation Hardened SOS CMOS \n• Total Dose 200K RAD (Si) \n• SEP Effective LET No Upsets: >100 MEV-cm2/mg \n• Single Event Upset (SEU) Immunity -9 Errors/Bit-Day (Typ) \n• Dose Rate Survivability: >1 x 1012 RAD (Si)/s \n• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse \n• Latch-Up Free Under;

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