IRF360

N-ChannelMOSFETTransistor

DESCRIPTION •siliconGateforfastswitchingatelevate •rugged APPLICATIONS •suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioamplifiersandhighenergypulsecircuits.

IRF360

iscN-ChannelMOSFETTransistor

DESCRIPTION ·siliconGateforfastswitchingatelevate ·rugged ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioampl

IRFI360

TRANSISTORN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A)

HEXFETTRANSISTOR REPETITIVEAVALANCHERATEDANDdv/dtRATED 400Volt,0.20OhmHEXFET

IRFI360

SimpleDriveRequirements

IRFM360

400V,N-CHANNELHEXFETMOSFETTECHNOLOGY

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRFM360

SimpleDriveRequirements

IRFM360

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

IRFP360

23A,400V,0.200Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

IRFP360

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

IRFP360

PowerMOSFET