Radiation Hardened Quad 2-Input NAND Gate

Description The Intersil HCS00MS is a Radiation Hardened Quad 2-Input NAND Gate. A high on both inputs forces the output to a Low state. The HCS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Fa

文件：101.63 Kbytes 页数：8 Pages

Intersil

Radiation Hardened Quad 2-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Cos

文件：363.6 Kbytes 页数：8 Pages

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Quad 2-Input NAND Gate

The Intersil HCS00MS is a Radiation Hardened Quad 2-Input NAND Gate. A high on both inputs forces the output to a Low state.\nThe HCS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.\nThe HCS0 • 3 Micron Radiation Hardened SOS CMOS \n• Total Dose 200K RAD (Si) \n• SEP Effective LET No Upsets: >100 MEV-cm2/mg \n• Single Event Upset (SEU) Immunity -9 Errors/Bit-Day (Typ) \n• Dose Rate Survivability: >1 x 1012 RAD (Si)/s \n• Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse \n• Cosmic Ray Upset Im;

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瑞萨

MICROCHIP
SOP8

Microchip

微芯科技

上传：深圳市富达微科技有限公司

MICROCHIP
SOP-8

Microchip

微芯科技

上传：深圳市勤思达科技有限公司