IRF520

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

IRF520

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

APPLICATIONS nHIGHCURRENT,HIGHSPEEDSWITCHING nSOLENOIDANDRELAYDRIVERS nREGULATORS nDC-DC&DC-ACCONVERTERS nMOTORCONTROL,AUDIOAMPLIFIERS nAUTOMOTIVEENVIRONMENT(INJECTION, ABS,AIR-BAG,LAMPDRIVERS,Etc.)

IRF520A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.155Ω(Typ.)

IRF520A

iscN-ChannelMOSFETTransistor

IRF520FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPE