中低压MOS（20-150V）

HXC-Power

惠海半导体

MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

文件：268.63 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

文件：268.63 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 3.3 m, 132 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：269.15 Kbytes 页数：7 Pages

ONSEMI

安森美半导体