1200 V, 530 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62 mm Footprint • Housing CTI ≥ 600 (Material Group I) • Compliant with EN45545-2 R22/23 HL3 • High Humidity Operation THB-80 (HV-H3TRB) • Low Inductance Design Optimized for SiC • Ultra Low Loss, High-Frequency Operation • Normally-off, Fail-safe Devi

文件：3.40523 Mbytes 页数：12 Pages

WOLFSPEED

Gate Driver Boards

Designed for Harsh Environments. Wolfspeed’s BM3 power module platform provides the system benefits of silicon carbide (SiC) while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62 mm BM3 package enables high speed silicon carbide switching benefit .css-1d32f0i h1{font-size:4.4rem;font-weight:700;line-height:1.2;margin-bottom:0.425em;}@media (min-width: 768px){.css-1d32f0i h1{font-size:5.4rem;}}.css-1d32f0i h2{font-size:3.6rem;font-weight:700;line-height:1.2;margin-bottom:0.475em;}@media (min-width: 768px){.css-1d32f0i h2{font-size:4rem;}}.css;

Wolfspeed(CREE)

分立式 MOSFET

1200 V, 2.67 mΩ, 62 mm, Half-Bridge, Industrial + HV-H3TRB qualified, CTI 600, SiC Power Module with Pre-Applied Thermal Interface Material (TIM)

Wolfspeed(CREE)

1200 V, 530 A, Silicon Carbide, Half-Bridge Module

Technical Features • Industry Standard 62 mm Footprint • High Humidity Operation THB-80 (HV-H3TRB) • Ultra Low Loss, High-Frequency Operation • Zero Reverse Recovery from Diodes • Zero Turn-off Tail Current from MOSFET • Normally-off, Fail-safe Device Operation • Copper Baseplate and Alumin

文件：3.52944 Mbytes 页数：12 Pages

WOLFSPEED