Two-Wire Hall-Effect Sensor Family

Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the

文件：1.73062 Mbytes 页数：36 Pages

MICRONAS

多功能霍尔效应传感器系列

HAL 5xy系列由各种以CMOS生产的霍尔开关组成。它们都具有主动温度偏置补偿，比较器和开漏输出晶体管。比较器通过霍尔片（霍尔电压）比较实际磁通量和设定的参考值（开关点）。输出晶体管相应开或关。\n这系列的不同产品以开关行为和开关点来区分。主动偏置补偿带来在电压和温度范围变化下的稳定磁场数据。此外，磁参数对机械压力效应不敏感。产品系为工业和汽车应用设计，工作电压范围从3.8伏到24伏，环境温度范围从–40 °C 到150 °C。产品有 SMD-封装 SOT89B-1和含铅的TO92UA-1和TO92UA-2封装。 ·Switching offset compensation at typically 62 kHz\n·Operates from 3.8 V to 24 V supply voltage\n·Overvoltage protection at all pins\n·Reverse-voltage protection at VDD-pin\n·Magnetic characteristics are robust regarding mechanical stress effects\n·Short-circuit protected open-drain output by therma;

TDK-Micronas

Package：TO-243AA，变式；包装：带盒（TB） 功能：单极开关 类别：传感器，变送器 磁性传感器 - 开关（固态） 描述：MAGNETIC SWITCH UNIPOL SOT89B-1

TDK-Micronas GmbH

Octal D-type transparent latch with 5-volt tolerant inputs/outputs 3-State

DESCRIPTION The 74LVC573A is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3V or 5V devices. In 3-State operation, outputs can handle 5V. This feature allows the use of these devices as

文件：102.64 Kbytes 页数：12 Pages

PHI

PHI

Octal D-Type Latch with 3-State Outputs With 5 V?뭈olerant Inputs

The MC74LVX573 is an advanced high speed CMOS octal latch with 3−state outputs. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. This 8−bit D−type latch is controlled by a latch enable input and an output enable input. When the output enable inpu

文件：102.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Schottky Barrier Rectifier

Description: The NTE573 is an axial lead metal–to–silicon power diode using the Schottky Barrier principle. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low–voltage, high–frequency inverters, a

文件：18.88 Kbytes 页数：2 Pages

NTE