预配置的线性霍尔传感器，以CMOS技术生产

HAL 4xy系列产品具有温度补偿霍尔片，斩波偏置补偿，两个线性输出段，以及保护装置。输出电压与穿过霍尔片的磁通量成比例。斩波偏置补偿在全电压和温度范围内保持稳定的磁特性。HAL 4x1系列可用于磁场测量，电流测量，及探测任何机械运动。也可以实现精确的角度测量和距离测量。产品耐受性好，可在用于恶劣的电机械环境。产品适用于工业和汽车应用，温度范围 –40 °C 到 170 °C (HAL 401) / –40 °C 到 100°C (HAL 411)，SMD SOT89B封装。 ·Switching offset compensation at 147 kHz\n·Low magnetic offset\n·Extremely sensitive\n·Overvoltage protection\n·Reverse-voltage protection of VDD-pin\n·Differential output\n·Accurate absolute measurements of DC and low frequency magnetic fields\n·On-chip temperature compensation;

TDK-Micronas

Linear Hall-Effect Sensor IC

文件：1.35577 Mbytes 页数：20 Pages

MICRONAS

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：37.28 Kbytes 页数：2 Pages

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

文件：35.51 Kbytes 页数：2 Pages

POLYFET

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

文件：37.33 Kbytes 页数：2 Pages

POLYFET