HAL109TQ-I

为白色家电和工业应用设计的活儿开关系列产品; ·Temperature ranges: C (Commercial, TJ = 0 °C to 85 °C) I (Industrial, TJ = –20 °C to 125 °C)\n·Operates from 3.8 V to 24 V supply voltage\n·Operates with static magnetic fields and dynamic magnetic fields up to 10 kHz\n·Overvoltage protection at all pins\n· Reverse-voltage protection at VDD pin\n·Magnetic characteristics are robust against mechanical stress effects\n·Short-circuit protected open-drain output by thermal shut down\n·Constant switching points over a wide supply voltage and temperature range\n·The decrease of magnetic flux density caused by rising temperature in the sen- sor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics\n·High temperature stability for home appliances and industrial applications\n·High ESD rating\n;

HAL1xy开关系列是为家用电器盒工业应用设计的。传感器系以CMOS技术生产，它包含一个主动偏置补偿的温度补偿霍尔片，一个比较器，和一个开漏输出晶体管。比较器会通过霍尔片（霍尔电压）比较实际的磁通量和设定的参考值（开关点）。相应地，输出晶体管打开或者关闭。主动偏置补偿使得磁参数对机械应力效应下保持稳定可靠。此外，磁参数在全电压和全温度下都是持续的。HAL1xy系列产品有SOT89B SMD和TO92UA两种封装。     框图 － 系统架构 霍尔效应传感器是一个感应磁场而开关的单片集成电路。如果磁通线垂直于感应区域的磁场靠近传感器，霍尔片会按比例输出电压。霍尔电压就和比较器里的实际阀值进行比较。   独立于温度的偏置用来在高温下补偿磁场的减弱。如果磁场超过了阀值，开漏输出开关就切换到合适的状态。内置的磁滞消除震动病提供平稳的开关输出性能。由机械应力引起的磁场偏置由“开关偏置补偿技术”来补偿。

HAL109TQ-I

Hall-Effect Switch IC Family

Introduction TheHAL1xyHallswitchfamilyisproducedinCMOStechnology.Thesensorsincludeatemperature-compensatedHallplatewithactiveoffsetcompensation,acomparator,andanopen-drainoutputtransistor.ThecomparatorcomparestheactualmagneticfluxthroughtheHallplate(Hallvol

HAL109TQ-I

Hall-Effect Switch IC Family

Introduction TheHAL1xyHallswitchfamilyisproducedinCMOStechnology.Thesensorsincludeatemperature-compensatedHallplatewithactiveoffsetcompensation,acomparator,andanopen-drainoutputtransistor.ThecomparatorcomparestheactualmagneticfluxthroughtheHallplate(Hallvol

HAL109TQ-I

Package：TO-243AA，变式；包装：带盒（TB） 功能：单极开关 类别：传感器，变送器 磁性传感器 - 开关（固态） 描述：MAGNETIC SWITCH UNIPOL SOT89B-3

ETC

HC109

DualJ-KFlip-FlopwithSetandReset

TheSL74HC109isidenticalinpinouttotheLS/ALS109.ThedeviceinputsarecompatiblewithstandardCMOSoutputs,withpullupresistors,theyarecompatiblewithLS/ALSTTLoutputs. ThisdeviceconsistsoftwoJ-Kflip-flopswithindividualset,reset,andclockinputs.Changesattheinputsare

HC109

DUALJ-KPOSITIVE-EDGE-TRIGGEREDFLIP-FLOPSWITHCLEARANDPRESET

HCS109D

RadiationHardenedDualJKFlipFlop

Description TheIntersilHCS109MSisaRadiationHardenedDualJKFlipFlopwithsetandreset.Theflipflopchangesstatewiththepositivetransitionoftheclock(CP1orCP2). TheHCS109MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradia

HCS109D

RadiationHardenedDualJKFlipFlop

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos

HCS109DMSR

RadiationHardenedDualJKFlipFlop

Description TheIntersilHCS109MSisaRadiationHardenedDualJKFlipFlopwithsetandreset.Theflipflopchangesstatewiththepositivetransitionoftheclock(CP1orCP2). TheHCS109MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradia

HCS109DMSR

RadiationHardenedDualJKFlipFlop

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Cos