Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

文件：115.88 Kbytes 页数：10 Pages

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Silicon P Channel MOS FET Series Power Switching

Description\nThis FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over pow • Logic level operation to (–4 to –6 V Gate drive)\n• High endurance capability against to the shut-down circuit\n• Built-in the over temperature shut-down circuit\n• Latch type shut down operation (need 0 voltage recovery);

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Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

文件：115.88 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

文件：115.88 Kbytes 页数：10 Pages

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Silicon P Channel MOS FET Series Power Switching

文件：138.87 Kbytes 页数：12 Pages

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P-Channel 60-V (D-S) MOSFET

文件：1.78871 Mbytes 页数：8 Pages

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Silicon P Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio • Logic level operation to (–4 to –6 V Gate drive)\n• High endurance capability against to the shut-down circuit\n• Built-in the over temperature shut-down circuit\n• Latch type shut down operation (need 0 voltage recovery);

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Intelligent Power Devices

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