H6B65M芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
H6B65M	文件：1.63095 Mbytes Page：9 Pages	丝印：H6B65M；Package：TO-252；650V, 6A IGBT with soft and fast recovery anti-parallel diode Features  High efficient turn-on di/dt controllability  Low VCE(SAT) enable high efficiencies  Low Turn-off switching loss and softness  Very Good EMI and High Short-Circuit Ruggedness 文件：1.63095 Mbytes 页数：9 Pages	HUIXIN 慧芯电子	HUIXIN
H6B65M	文件：1.63095 Mbytes Page：9 Pages	丝印：H6B65M；Package：TO-252；650V, 6A IGBT with soft and fast recovery anti-parallel diode Features  High efficient turn-on di/dt controllability  Low VCE(SAT) enable high efficiencies  Low Turn-off switching loss and softness  Very Good EMI and High Short-Circuit Ruggedness 文件：1.63095 Mbytes 页数：9 Pages	HUIXIN 慧芯电子	HUIXIN

更多H6B65M供应商更新时间2026-3-17 16:26:00