DDR3 SDRAM

The H5TQ8G43BMR-xxC and H5TQ8G83BMR-xxC are a 8Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth and normal power operation at 1.5V. SK hynix 8Gb DDR3 SDRAMs offer fully synchronous operations •  VDD=VDDQ=1.5V +/- 0.075V\n• Differential Data Strobe (DQS, DQS)\n• DM masks write data-in at the both rising and falling edges of the data strobe\n• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11 and 13 supported\n• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10\n• BL switch on the fly\;

SK hynix

海力士

8Gb DDR3 SDRAM

文件：477.71 Kbytes 页数：35 Pages

Hynix

海力士

8Gb DDR3 SDRAM

文件：477.71 Kbytes 页数：35 Pages

Hynix

海力士

8Gb DDR3 SDRAM

文件：477.71 Kbytes 页数：35 Pages

Hynix

海力士