DDR3 SDRAM

The H5TQ4G43BFR-xxC and H5TQ4G83BFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falli •  VDD=VDDQ=1.5V +/- 0.075V\n• Differential Data Strobe (DQS, DQS)\n• DM masks write data-in at the both rising and falling edges of the data strobe\n• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 13 and 14 supported\n• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10\n• BL switch on the ;

SK hynix

海力士

4Gb DDR3 SDRAM

文件：486.31 Kbytes 页数：34 Pages

Hynix

海力士

4Gb DDR3 SDRAM

文件：486.31 Kbytes 页数：34 Pages

Hynix

海力士

4Gb DDR3 SDRAM

文件：458.2 Kbytes 页数：35 Pages

Hynix

海力士

4Gb DDR3 SDRAM

文件：458.2 Kbytes 页数：35 Pages

Hynix

海力士

4Gb DDR3 SDRAM

文件：458.2 Kbytes 页数：35 Pages

Hynix

海力士